9vmq
Crystal structure of Dot/Icm T4SS effector Ceg10(C159S)
SAXS Profile
P(r) Distribution
1. Structure Basics
| entry_id | 9vmq |
| deposition_date | 2025-06-29 |
| last_revision | 2026-02-18 |
| title | Crystal structure of Dot/Icm T4SS effector Ceg10(C159S) |
| keywords | Effector, T4SS, TRANSFERASE; TRANSFERASE |
| method | X-RAY DIFFRACTION |
Download Data
2. SAXS Parameters (CRYSOL)
| rg_guinier | 36.29 Å |
| rg_electron | 36.04 Å |
| i0 | 153852000.00 |
| molecular_weight | 101010.0 kDa |
| excluded_volume | 126790 ų |
| envelope_volume | 159990 ų |
| shell_volume | 38678 ų |
| envelope_diameter | 125.4 Å |
| shell_rg | 40.30 Å |
| envelope_rg | 35.89 Å |
| shape_rg | 36.03 Å |
| total_rg | 36.37 Å |
| total_atoms | 7138 |
| n_residues | 884 |
| n_harmonics | 20 |
| q_range | — – 0.5000 Å−1 |
| n_points | 101 |
| shell_type | directional |
| solvent_density | 0.3340 e/ų |
| contrast_shell | 0.0300 e/ų |
| crysol_version | 4.1.3 |
3. P(r) Analysis (GNOM)
| dmax | 123.0 Å |
| rg_real | 36.59 Å |
| rg_real_error | 1.16 Å |
| i0_real | 1.5390e+08 |
| i0_real_error | 2.5490e+06 |
| rg_reciprocal | 36.41 Å |
| i0_reciprocal | 153800000.0000 |
| total_estimate | 0.7522 |
| solution_quality | GOOD a GOOD solution |
| n_peaks | 1 |
| r_peak_primary | 30.8 Å |
| skewness | 0.470 |
| kurtosis | -0.570 |
| angular_range | — – 0.2200 Å−1 |
| current_alpha | 0.0000 |
| highest_alpha | 95180000.0000 |
| n_real_points | 45 |
| gnom_version | 4.1.3 |
| quality_criteria | AN1: 0.000; Oscil: 0.683; Stabil: 1.000; Sysdev: 1.000; Positv: 1.000; Valcen: 0.725; Smooth: 0.000 |